HARVARD
Materials Research Science and Engineering Center
 
 
 
Avalanche Photodiode using Microtextured Silicon
Friend and Mazur

Avalanche Photodiode
 
Response from Avalanche Photodiode

Output: In collaboration with Radiation Monitoring Devices, Incorporated of Watertown, MA, Mazur and Friend have developed a prototype avalance photodiode (APD) using microtextured silicon. The APD produces a signal in the infrared at 1.3 Ám where ordinary silicon produces a signal only at bias voltages near the breakdown threshold.

Outcome: The subbandgap photocurrent shows great promise for a new class of infrared detectors. The demonstrated subbandgap responsivity extends the wavelength range of silicon-based detectors beyond 1.1 Ám to wavelengths which are of great importance in optoelectronic communications.